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Product Description
The SGL-0263 is a high performance SiGe HBT MMIC low noise amplifier featuring 1 micron emitters with FT up to 50 GHz. This device has an internal temperature compensation circuit permitting operation directly from supply voltages as low as 2.5V. The SGL-0263 has been characterized at Vd = 3V for low power and 4V for medium power applications. Only 2 DC-blocking capacitors, 2 input matching components, a bias resistor, and an optional RF choke are required for operation from 1400-2500 MHz. The matte tin finish on Sirenza's lead-free "Z" package is applied using a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. The package body is manufactured with green molding compounds that contain no antimony trioxide or halogenated fire retardants.
SGL-0263 SGL-0263Z
Pb
RoHS Compliant & Green Package
1400 - 2500 MHz Silicon Germanium Cascadable Low Noise Amplifier
Product Features * Available in Lead Free, RoHS Compliant * * * * *
green package ( Z Suffix ) High Input / Output Intercept Low Noise Figure: 1.3dB typ. at 1900 MHz Low Power Consumption Single Voltage Supply Operation Internal Temperature Compensation
VS
Temperature Compensation Circuit
RF Out / VS
RF In
Applications * Receivers, GPS, RFID * Cellular, Fixed Wireless, Land Mobile
Symbol
Parameter
Freq. (MHz ) 1900 2100 2400 1900 2100 2400 1900 2100 2400 1900 2100 2400 1900 1900 1900
Min.
(VS=3V)
Typ.
(VS=3V)
Max.
(VS=3V)
Typ.
(VS=4V)
Units
12.1
G
Small Signal Gain
13.4 12.5 10.8 5.5 6.8 7.9 9.5 13.5 15.5 1.3 1.5 2.0
14.7
13.8 12.9 11.3 11.4 12.3 12.8 15.1 16.8 18.4
dB
3.5
P 1dB
Output Power at 1dB Compression Input Third Order Intercept Point
dB m
7.5
IIP3
Tone Spacing = 1 MHz Pout per tone = -13dBm
dB m
1.7
NF IRL ORL |S12| ID RTH,j-l
Noise Figure, ZS = 50 Ohms Input Return Loss Output Return Loss Reverse Isolation Device Current Thermal Resistance (junction to lead)
1.9 2.1 2.8 21.9 17.4 21.0
dB dB dB dB mA
o
10.0 10.0
13.3 12.9 20.7
9.0
12.5 255
15
23
C/W
Test Conditions: 1400-2500 MHz Application Circuit TLEAD = 25C
Z0 = ZL = 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2005 Sirenza Microdevices, Inc.. All worldwide rights reserved.
303 South Technology Court Broomfield, CO 80021
EDS-101502 Rev C 1
Phone: (800) SMI-MMIC http://www.sirenza.com
SGL-0263(Z) 1400-2500 MHz SiGe Low Noise Amplifier
Typical RF Performance Over Lead Temperature at 3 V and 4 V -- 1400-2500 MHz Evaluation Board
Input IP3 vs. Frequency Over Temperature
20 18 16
16 14 12 10
P1dB vs. Frequency Over Temperature
Input IP3 (dBm)
14
12 10
T=-40C, VS=3 V
P1dB (dBm)
8 6
T=-40C, VS=3 V
8 6 4 1400
T=+25C, VS=3 V T=+85C, VS=3 V T=-40C, VS=4 V T=+25C, VS=4 V T=+85C, VS=4 V
4 2 0 1400
T=+25C, VS=3 V T=+85C, VS=3 V T=-40C, VS=4 V T=+25C, VS=4 V T=+85C, VS=4 V
1500
1600
1700
1800
1900
2000
2100
2200
2300
2400
2500
1500
1600
1700
1800
1900
2000
2100
2200
2300
2400
2500
Freq. (MHz)
Freq. (MHz)
Noise Figure vs. Frequency at TLEAD=+25C
3.5
Output IP3 vs. Frequency Over Temperature
34 32
3.0
30
Output IP3 (dBm)
2.5
28
NF (dB)
2.0
26 24
T=-40C, VS=3 V
1.5
22
1.0 Vs=3 V Vs=4 V 0.5 1400
T=+25C, VS=3 V T=+85C, VS=3 V T=-40C, VS=4 V
20 18 1400
T=+25C, VS=4 V T=+85C, VS=4 V
1600
1800
2000
2200
2400
1500
1600
1700
1800
1900
2000
2100
2200
2300
2400
2500
Freq. (MHz)
Freq. (MHz)
Device Voltage (Vd) vs. Device Current (Id) for T = -40C, +25C, & +85C Load lines for Vs =+5 Volts, Rs=43 W and 180 W
5.0
Absolute Maximum Ratings
Parameter Max. Device Current (ID) Max. Device Voltage (VS) Max. RF Input Power Max. Junction Temp. (TJ) Absolute Limit 45 mA 5V +10 dBm
+150C -40C to +85C +150C
Vs= +5 V, Rs = 43 W
4.5 4.0 3.5 Vd (Volts) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 6 8 10 12 14 16 Id (mA) 18 20 22 24 26
T=-40C T=+25C T=+85C
Vs = +5 V, Rs = 180 W
Operating Temp. Range (TLEAD)
Max. Storage Temp.
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias conditions should also satisfy the following expression: IDVD < (TJ - TLEAD) / RTH, j-l
303 South Technology Court Broomfield, CO 80021
EDS-101502 Rev C 2
Phone: (800) SMI-MMIC http://www.sirenza.com
SGL-0263(Z) 1400-2500 MHz SiGe Low Noise Amplifier
Typical RF Performance at VS = 3 V -- 1400-2500 MHz Evaluation Board -- TLEAD=+25C
20 16 12 8 4 0 1300
|S21| vs. Frequency
0 -5 -1 0
|S11| vs. Frequency
S21 (dB)
S11 (dB)
-1 5 -2 0 -2 5 -3 0 1300
1500
1700
1900
2100
2300
2500
1500
1700
1900
2100
2300
2500
F re q u e n c y (M H z)
-1 0 -1 4 -1 8 -2 2 -2 6
-2 5
F re q u e n c y (M H z)
|S12| vs. Frequency
|S22| vs. Frequency
0 -5 -1 0
S12 (dB)
S22 (dB)
1500 1700 1900 2100 2300 2500
-1 5 -2 0
-3 0 1300
-3 0 1300
1500
1700
1900
2100
2300
2500
F re q u e n c y (M H z)
F re q u e n c y (M H z)
Typical RF Performance at VS = 4 V -- 1400-2500 MHz Evaluation Board -- TLEAD=+25C
|S21| vs. Frequency
20 16 12 8 4 0 1300 0 -5 -1 0
|S11| vs. Frequency
S21 (dB)
S11 (dB)
-1 5 -2 0 -2 5 -3 0 1300
1500
1700
1900
2100
2300
2500
1500
1700
1900
2100
2300
2500
F re q u e n c y (M H z)
F re q u e n c y (M H z)
|S12| vs. Frequency
-1 0 -1 4 -1 8 -2 2 -2 6 -3 0 1300 0 -5 -1 0
|S22| vs. Frequency
S12 (dB)
S22 (dB)
-1 5 -2 0 -2 5 -3 0 1300
1500
1700
1900
2100
2300
2500
1500
1700
1900
2100
2300
2500
F re q u e n c y (M H z)
F re q u e n c y (M H z)
NOTE: Full S-parameter data available at www.sirenza.com
303 South Technology Court Broomfield, CO 80021 EDS-101502 Rev C 3 Phone: (800) SMI-MMIC http://www.sirenza.com
SGL-0263(Z) 1400-2500 MHz SiGe Low Noise Amplifier
1400-2500 MHz Application Circuit
+VS
Delay Elements Ref. D es. Z1 Z2 Z3 Phase shift @ Z0 (Ohms) 2GHz (deg.) 50 50 50 11 13 6
Application Circuit Element Values
Reference Designator
CD2
RB2 CD1
Value 27 nH 1.2 nH
Manufacturer & Part No. TOKO LL1608-FS27NJ TOKO LL1608-FS1R2NJ
LB LM1 B1
1
RB1 (OPT)
B1 (OPT)
1500 Ohms FAIR-RITE 2508051527y0 @100 MHz Ferrite Bead 0.1 uF 22 pF 1.0 pF 47 Ohms 0 Ohms SAMSUNG CL10B103KBNC ROHM MCH185AA220DJK ROHM MCH185A1R0CK PHILLIPS 9C06031A47R0 JL HFT PHILLIPS 9C06031A0R00 JL HFT
4 CB Z1 RF INPUT CM1 LM1 Z2 3 SGL-0263 6 5 Z3
LB
CB RF OUTPUT
C B, C D 1 C D2 CM1 RB1
1
1400-2500 MHz Evaluation Circuit Board
SIRENZA MICRODEVICES ECB-101761 Rev B RF IN
RB2
2
Notes: 1. B1 and RB1 provide improved K-factor but are optional.
2. RB2 may be introduced as a voltage dropping resistor for use with supply voltages greater than the desired device bias voltage.
Device Pin Out Guide
CB CM1
LM1
SGL-0263 CB
LB
RB1
RF OUT
Pin # 1
Function N/C
Description No electrical connection. Provide an isolated (ungrounded) solder pad for mounting integrity. RF input pin. This pin requires the use of an external DC blocking capacitor chosen for the frequency of operation. Voltage supply connection. Bypass with suitable capacitors. Connection to ground. Provide via holes as close to the device ground leads as possible to reduce ground inductance and achieve optimum RF performance. RF output and voltage supply. DC voltage is present on this pin, therefore a DC blocking capacitor is necessary for proper operation.
3
CD1 CD2
RF IN
B1
4
DC BIAS
RB2
2, 5
Ground
Note: Circuit board dielectric material is GETEK,ML200C
+VS GND
6
RF OUT/ BIAS
Part Identification Marking & Pin Out
Reliability & Qualification Information Parameter ESD Rating - Human Body Model (HBM) Moisture Sensitivity Level Rating Class 1A MSL 1
654
654
L1
123
Tin-Lead
L1Z
123
Lead Free RoHs Compliant
The product qualification report may be dow nloaded at w w w.sirenza.com
Part Ordering Information
Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed.
Part Number SGL-0263 SGL-0263Z
P ackag e / L ead Composition Tin-Lead Lead Free, RoHs Compliant
R eel Siz e 7" 7"
Devices / R eel 3000 3000
303 South Technology Court Broomfield, CO 80021
EDS-101502 Rev C 4
Phone: (800) SMI-MMIC http://www.sirenza.com
SGL-0263(Z) 1400-2500 MHz SiGe Low Noise Amplifier
SOT-363 PCB Pad Layout
Dimensions in inches [millimeters]
Pad Layout
0.026
0.075
Notes: 1. Provide a ground pad area under device pins 2 & 5 with plated via holes to the PCB ground plane. 2. We recommend 1 or 2 ounce copper. Measurements for this data sheet were made on a 31 mil thick Getek with 1 ounce copper on both sides.
0.035
0.016
SOT-363 Nominal Package Dimensions
Dimensions in inches [millimeters] A link to the SOT-363 package outline drawing with full dimensions and tolerances may be found on the product web page at www.sirenza.com.
303 South Technology Court Broomfield, CO 80021
EDS-101502 Rev C 5
Phone: (800) SMI-MMIC http://www.sirenza.com

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